- Heraeus Electronics /
- Produkte & Lösungen /
- Dickschicht-Technologie /
- Produktselektor /
- PCC11914
PCC11914
- Paste Type: Component Metallization
- Substrate: PZT, NTC Ceramics, Alumina (Al2O3), Steatite, Porcelain
- Application Method: Dipping, Spraying
- Application: Piezo, Component Metallization
Details
Description
PCC11914 is a Pb and Cd free high performance
silver conductor designed for metallizing ceramic
component devices. It employs a mix bonded; lead
free frit system that yields a dense, highly
conductive film that provides high adhesion to
various oxide substrates. The rheology of
PCC11914 is optimized for dipping and spraying
methods of application.
silver conductor designed for metallizing ceramic
component devices. It employs a mix bonded; lead
free frit system that yields a dense, highly
conductive film that provides high adhesion to
various oxide substrates. The rheology of
PCC11914 is optimized for dipping and spraying
methods of application.
Key Features
REACH1
and ROHS2
compliant
Pb and Cd free
Excellent conductivity
High adhesion to various oxide substrates
Optimised for dipping and spraying
applications
and ROHS2
compliant
Pb and Cd free
Excellent conductivity
High adhesion to various oxide substrates
Optimised for dipping and spraying
applications
Metal
Ag
Viscosity
2.7 – 3.3 kcps, Brookfield RVT
Spindle #4 @ 20 rpm, 25°C
Spindle #4 @ 20 rpm, 25°C
Storage and Paste Preparation
Store in a dry location at 5 – 25°C. DO NOT REFRIGERATE. Allow paste to come to room temperature prior to opening. Spatulate well before using, as settling may occur during storage.
Warranty
Material guaranteed to meet specifications for 6 months from date of manufacturing with proper storage.
Printing Parameters
The material should be thoroughly shaken before use.
Apply the materials by dipping or spraying.
Apply the materials by dipping or spraying.
Drying Temperature
125 - 150 ºC for 10 - 15 minutes
Process Temperature (TDS)
850 ºC peak temperature
Dwell time of 10 minutes
Dwell time of 10 minutes
Film Thickness
11 – 18 µm