Heraeus Electronics Presentations Include:
This presentation examines the reliability of GaN and SiC devices after sintering, highlighting how substrate choice influences die cracking and mechanical stress. Results support the development of accelerated reliability testing methods for wide bandgap semiconductors in high-performance power electronics and were performed within the EU project “ALL2GaN”.
Heraeus Electronics researchers will present a comparative study of silicon nitride ceramics for power module substrates, detailing AC test regimes, partial discharge behavior, and voltage-dependent lifetime predictions. The findings provide practical guidance for selecting and qualifying substrate materials in demanding applications.
Heraeus Electronics will also exhibit at a tabletop in the exhibition area, where attendees can talk to experts and learn more about the company’s solutions for module packaging, e.g. sintering and bonding materials, and substrate technologies.
