AMB Substrates: High Performance for Demanding Power Electronics
Condura®.ultra
►Ag-free AMB technology — high performance without precious metal dependency
►Cost-effective substrate with reduced exposure to silver price volatility
►Thermal conductivity ≥ 80 W/m·K with bending strength ≥ 700 MPa
Condura®.prime
►Proven silicon nitride AMB substrate for maximum reliability
►Bending strength ≥ 650 MPa for extended module lifetime under thermal cycling
►Customized surface treatments for your specific assembly process
Built for Supply Chain Security
In today’s landscape, supply chain security is a critical factor in material selection. Heraeus Electronics operates production sites in Romania and China, with tailored sourcing models that give you the flexibility to structure your supply according to your requirements. Whether you need regional sourcing, dual-source strategies, or customized delivery models - we provide the infrastructure to support a resilient and reliable supply of AMB substrates.
Condura®.ultra – Ag-free AMB Si₃N₄
Condura®.ultra is a silver-free active metal brazed substrate that delivers the same high-performance properties as conventional AMB — without the dependency on precious metals. By eliminating silver from the brazing process, Condura®.ultra reduces your exposure to precious metal price volatility while maintaining outstanding mechanical and thermal performance.
Built on silicon nitride (Si₃N₄) ceramic, it offers thermal conductivity of ≥ 80 W/m·K, bending strength of ≥ 700 MPa, and supports copper thicknesses from 0.30 mm to 0.80 mm. Asymmetric brazing configurations are available on request, with delivery as single units or master cards (usable area 178 mm × 127 mm). Surface finish options include bare Cu, full or selective Ag plating.
Material Properties
| Property | Rating | Unit |
|---|---|---|
| Bending strength | ≥ 700 | MPa |
| Fracture toughness | ≥ 6 | MPa·m½ |
| Thermal conductivity (@ 20 °C) | ≥ 80 | W/m·K |
| Coefficient of thermal expansion (20–500 °C) | typ. 2.6 | ppm/K |
| Young’s modulus (@ 20 °C) | ≥ 280 | GPa |
| Electrical strength (@ 50 Hz) | ≥ 20 | kV/mm |
| Dielectric resistivity (@ 20 °C) | ≥ 10¹⁴ | Ω·cm |
Download Condura®.ultra Design Guidelines
Condura®.prime – AMB Si₃N₄
Condura®.prime is our established silicon nitride AMB substrate, trusted by power module manufacturers for applications where long operational lifetime, high power density, and proven reliability are essential. Built on the same high-quality Si₃N₄ ceramic platform, Condura®.prime delivers the mechanical strength and thermal performance needed for the most demanding power electronics environments.
It offers thermal conductivity of ≥ 80 W/m·K, bending strength of ≥ 650 MPa, and supports copper thicknesses from 0.30 mm to 0.80 mm. Thinner ceramics vs. AlN are possible for equal thermal resistance, supporting compact module designs. Customized surface treatments are available for various assembly and interconnection technologies. Delivery as single units or master cards (usable area 178 mm × 127 mm).
Material Properties
| Property | Rating | Unit |
|---|---|---|
| Bending strength | ≥ 650 | MPa |
| Fracture toughness | ≥ 6 | MPa·m½ |
| Thermal conductivity (@ 20 °C) | ≥ 80 | W/m·K |
| Coefficient of thermal expansion (20–500 °C) | typ. 2.6 | ppm/K |
| Young’s modulus (@ 20 °C) | ≥ 280 | GPa |
| Electrical strength (@ 50 Hz) | ≥ 15 | kV/mm |
| Dielectric resistivity (@ 20 °C) | ≥ 10¹⁴ | Ω·cm |
